2SA940 Просмотр технического описания (PDF) - Transys Electronics Limited
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2SA940 Datasheet PDF : 1 Pages
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Transys
Electronics
LIMITED
TO-220 Plastic-Encapsulated Transistors
2SA940 TRANSISTOR (PNP)
FEATURES
Power dissipation
PCM : 1.5 W (Tamb=25℃)
Collector current
ICM : -1.5 A
Collector-base voltage
V(BR)CBO : -150 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
TO-220
1. BASE
2. COLLECTOR
3. EMITTER
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
VCE(sat)
VBE
fT
Cob
Test conditions
Ic=-100µA, IE=0
Ic=-1mA, IB=0
IE=-100µA, IC=0
VCB=-120V, IE=0
VEB=-5V, IC=0
VCE=-10V, IC=-500mA
IC=-500mA, IB=-50mA
VCE=-10V, IC=-500mA
VCE=-10V, IC=-500mA
VCB=-10V, IE=0, f=1MHz
MIN TYP MAX UNIT
-150
V
-150
V
-5
V
-10 µA
-10 µA
40
140
-1.5 V
-0.65
-0.85 V
4
MHz
55
pF
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