BUZ80A Просмотр технического описания (PDF) - Inchange Semiconductor
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BUZ80A Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
BUZ80A
DESCRIPTION
·High speed switching
·Low RDS(ON)
·Easy driver for cost effective application
APPLICATIONS
·Automotive power actuator drivers
·Motor controls
·DC-DC converters
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
800
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=37℃
3
A
Ptot
Total Dissipation@TC=25℃
75
W
Tj
Max. Operating Junction Temperature -65-150 ℃
Tstg
Storage Temperature Range
-65-150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.67 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient
75 ℃/W
isc website：www.iscsemi.cn
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