BCX68(2001) Просмотр технического описания (PDF) - Infineon Technologies
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BCX68 Datasheet PDF : 4 Pages
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BCX68
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
Characteristics
Collector-emitter breakdown voltage
IC = 30 mA, IB = 0
V(BR)CEO 20
-
-V
Collector-base breakdown voltage
IC = 10 µA, IB = 0
V(BR)CBO 25
-
-
Emitter-base breakdown voltage
IE = 1 µA, IC = 0
V(BR)EBO 5
-
-
Collector cutoff current
VCB = 25 V, IE = 0
ICBO
-
-
100 nA
Collector cutoff current
VCB = 25 V, IE = 0 , TA = 150 °C
ICBO
-
-
100 µA
DC current gain 1)
IC = 5 mA, VCE = 10 V
hFE
50
-
--
DC current gain 1)
IC = 500 mA, VCE = 1 V
hFE
BCX68
85
- 375
BCX68-10
85 100 160
BCX68-16
100 160 250
BCX68-25
160 250 375
DC current gain 1)
IC = 1 A, VCE = 1 V
Collector-emitter saturation voltage1)
IC = 1 A, IB = 100 mA
Base-emitter voltage 1)
IC = 5 mA, VCE = 10 V
IC = 1 A, VCE = 1 V
hFE
60
-
-
VCEsat
-
-
0.5 V
VBE(ON)
-
0.6
-
-
-
1
AC Characteristics
Transition frequency
IC = 100 mA, VCE = 5 V, f = 20 MHz
fT
- 100 - MHz
1) Pulse test: t ≤=300µs, D = 2%
2
Jun-29-2001
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