MJ13333 Просмотр технического описания (PDF) - Inchange Semiconductor

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MJ13333

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

MJ13333

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VCEO(SUS) Collector-Emitter Sustaining Voltage IC=100mA ; IB=0

400

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= 10A; IB=2A

IC= 10A; IB=2A,TC=100℃

VCE(sat)-2

VBE(sat)

ICEV

ICER

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Collector Cutoff Current

Collector Cutoff Current

IC= 20A; IB=6.7A

IC= 10A; IB= 2A

IC= 10A; IB= 2A,TC=100℃

VCEV=400V;VBE(off)=1.5V

VCEV=400V;VBE(off)=1.5V;TC=150℃

VCE= 400V; RBE= 50Ω,TC= 100℃

V

1.8

2.4

V

5

V

1.8

1.8

V

0.25

5.0

mA

5.0 mA

IEBO

Emitter Cutoff Current

VEB= 6V; IC=0

1 mA

hFE

DC Current Gain

IC= 5A ; VCE= 5V

10

60

fT

Current Gain-Bandwidth Product

COB

Output Capacitance

Switching times;Resistive Load

td

Delay Time

tr

Rise Time

ts

Storage Time

tf

Fall Time

IC= 0.3A ;VCE= 10V; ftest=1MHz

IE= 0; VCB= 10V; ftest=1kHz

IC= 10A , VCC= 250V; IB1=2A

VBE(off)= 5V; tp= 10μs;

Duty Cycle≤2.0%

5

40 MHz

125

500 pF

0.02 0.1 μs

0.3 0.7 μs

1.6 4.0 μs

0.3 0.7 μs

isc Website：www.iscsemi.cn

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