SRV05-4 Просмотр технического описания (PDF) - ON Semiconductor
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SRV05-4 Datasheet PDF : 9 Pages
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SRV05−4
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol
Parameter
IPP
VC
VRWM
IR
VBR
IT
IF
VF
Ppk
C
Maximum Reverse Peak Pulse Current
Clamping Voltage @ IPP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
Test Current
Forward Current
Forward Voltage @ IF
Peak Power Dissipation
Capacitance @ VR = 0 and f = 1.0 MHz
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
I
IF
VC VBR VRWM
IIRT VF
V
IPP
Uni−Directional TVS
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified)
Parameter
Symbol
Conditions
Min
Typ
Max Unit
Reverse Working Voltage
VRWM (Note 2)
5.0
V
Breakdown Voltage
VBR IT=1 mA, (Note 3)
6.0
V
Reverse Leakage Current
IR
VRWM = 5 V
5.0
mA
Clamping Voltage
VC
IPP = 1 A (Note 4)
12.5
V
Clamping Voltage
VC
IPP = 5 A (Note 4)
17.5
V
Junction Capacitance
CJ
VR = 0 V, f=1 MHz between I/O Pins and GND
3.0
5.0
pF
Junction Capacitance
CJ
VR = 0 V, f=1 MHz between I/O Pins
1.5
3.0
pF
Clamping Voltage
VC
Per IEC 61000−4−2 (Note 5)
Figure 1 and 2
V
2. TVS devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal or greater than the DC
or continuous peak operating voltage level.
3. VBR is measured at pulse test current IT.
4. Non−repetitive current pulse per Figure 5 (Any I/O Pin to Ground)
5. For test procedure see Figures 3 and 4 and Application Note AND8307/D.
Figure 1. ESD Clamping Voltage Screenshot
Positive 8 kV Contact per IEC61000−4−2
Figure 2. ESD Clamping Voltage Screenshot
Negative 8 kV Contact per IEC61000−4−2
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