MMBT3906(2009) Просмотр технического описания (PDF) - Diotec Semiconductor Germany
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MMBT3906 Datasheet PDF : 2 Pages
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MMBT3906
Characteristics (Tj = 25°C)
Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2)
- IC = 10 mA, - IB = 1 mA
- IC = 50 mA, - IB = 5 mA
- VCEsat
- VCEsat
Base-Emitter saturation voltage – Basis-Sättigungsspannung 2)
- IC = 10 mA, - IB = 1 mA
- IC = 50 mA, - IB = 5 mA
- VBEsat
- VBEsat
Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom
- VCE = 30 V, - VEB = 3 V
Emitter-Base cutoff current – Emitter-Basis-Reststrom
- ICEX
- VCE = 30 V, - VEB = 3 V
IEBV
Gain-Bandwidth Product – Transitfrequenz
- IC = 10 mA, - VCE = 20 V, f = 100 MHz
fT
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 5 V, IE = ie = 0, f = 1 MHz
CCBO
Emitter-Base Capacitance – Emitter-Basis-Kapazität
- VEB = 0.5 V, IC = ic = 0, f = 1 MHz
CEBO
Noise figure – Rauschzahl
- VCE = 5 V, - IC = 100 µA, RG = 1 kΩ, f = 1 kHz
F
Switching times – Schaltzeiten (between 10% and 90% levels)
delay time
rise time
- VCC = 3 V, - VBE = 0.5 V
td
- IC = 10 mA, - IB1 = 1mA
tr
storage time
fall time
- VCC = 3 V, - IC = 10 mA,
ts
- IB1 = IB2 = 1 mA
tf
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
RthA
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
Marking - Stempelung
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
–
–
0.25 V
–
–
0.4 V
0.65 V
–
0.85 V
–
–
0.95 V
–
–
50 nA
–
–-
50 nA
250 MHz
–
–
–
–
4.5 pF
–
–
10 pf
–
–
4 dB
–
–
35 ns
–
–
35 ns
–
–
225 ns
–
–
75 ns
< 200 K/W 1)
MMBT3904
MMBT3906 = 2A or 3E
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
1 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2
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