DTA125TKA Просмотр технического описания (PDF) - ROHM Semiconductor

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производитель

DTA125TKA

-100mA / -50V Digital transistor (with built-in resistors)

ROHM Semiconductor 

DTA125TUA / DTA125TKA

 Absolute maximum ratings (Ta=25C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

Limits

Unit

VCBO

−50

V

VCEO

−50

V

VEBO

−5

V

IC

−100

mA

Pc

200

mW

Tj

150

°C

Tstg

−55 to +150

°C

Data Sheet

 Electrical characteristics (Ta=25C)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

DC current transfer ratio

Input resistance

Transition frequency

∗ Characteristics of built-in transistor

Symbol

BVCBO

BVCEO

BVEBO

ICBO

IEBO

VCE(sat)

hFE

R1

fT ∗

Min.

−50

−50

−5

−

−

−

100

140

−

Typ. Max.

−

−

−

−

−

−

−

−0.5

−

−0.5

−

−0.3

250

600

200

260

250

−

Unit

V

V

V

μA

μA

V

−

kΩ

MHz

Conditions

IC= −50μA

IC= −1mA

IE= −50μA

VCB= −50V

VEB= −4V

IC= −0.5mA , IB= −0.05mA

IC= −1mA , VCE= −5V

−

VCE= −10V , IE=5mA , f=100MHz

 Electrical characteristic curves

1k

VCE=5V

500

Ta=100°C

Ta=25°C

200

100

Ta= −40°C

50

20

10

5

2

1

10μ 20μ 50μ 100μ 200μ 500μ 1m 2m 5m 10m

COLLECTOR CURRENT : IC (A)

Fig.1 DC current gain

vs. Collector current

1

IC/IB=10/1

500m

200m

Ta=100°C

100m

Ta=25°C

50m

Ta= −40°C

20m

10m

5m

2m

1m

10μ 20μ 50μ 100μ 200μ 500μ 1m 2m 5m 10m

COLLECTOR CURRENT : IC (A)

Fig.2 Collector-Emitter saturation voltage

vs. Collector current

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○c 2009 ROHM Co., Ltd. All rights reserved.

2009.06 - Rev.C

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