DTC124GUA_ Просмотр технического описания (PDF) - ROHM Semiconductor
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DTC124GUA_ Datasheet PDF : 3 Pages
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Transistors
DTC124GUA / DTC124GKA / DTC124GSA
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Emitter-base resistance
Transition frequency
∗ Transition frequency of the device.
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
R
fT
Min.
50
50
5
−
140
−
56
15.4
−
Typ.
−
−
−
−
−
−
−
22
250
Max.
−
−
−
0.5
260
0.3
−
28.6
−
Unit
V
V
V
µA
µA
V
−
kΩ
MHz
Conditions
IC= 50µA
IC= 1mA
IE= 330µA
VCB= 50V
VEB= 4V
IC= 10mA , IB= 0.5mA
IC= 5mA , VCE= 5V
−
VCE= 10V , IE= −5mA , f= 100MHz ∗
zElectrical characteristics curves
1k
VCE=5V
500
200
100
50
Ta=100°C
Ta=25°C
Ta= −40°C
20
10
5
2
1
100µ 200µ 500µ 1m 2m
5m 10m 20m 50m 100m
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain
vs. Collector current
1
IC/IB=20/1
500m
200m
100m
50m
20m
10m
5m
Ta=100°C
Ta=25°C
Ta= −40°C
2m
1m
100µ 200µ 500µ 1m 2m
5m 10m 20m 50m 100m
COLLECTOR CURRENT : IC (A)
Fig.2 Collector-Emitter saturation voltage
vs. Collector current
Rev.A
2/2
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