DTC124GUAT106 Просмотр технического описания (PDF) - ROHM Semiconductor
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DTC124GUAT106 Datasheet PDF : 3 Pages
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DTC124GUA / DTC124GKA
Electrical characteristics (Ta=25C)
Parameter
Symbol
Collector-base breakdown voltage BVCBO
Collector-emitter breakdown voltage BVCEO
Emitter-base breakdown voltage
BVEBO
Collector cutoff current
ICBO
Emitter cutoff current
IEBO
Collector-emitter saturation voltage VCE(sat)
DC current transfer ratio
hFE
Emitter-base resistance
R
Transition frequency
fT ∗
∗ Characteristics of built-in transistor
Min.
50
50
5
−
140
−
56
15.4
−
Typ.
−
−
−
−
−
−
−
22
250
Max.
−
−
−
0.5
260
0.3
−
28.6
−
Unit
V
V
V
μA
μA
V
−
kΩ
MHz
Conditions
IC=50μA
IC=1mA
IE=330μA
VCB=50V
VEB=4V
IC=10mA, IB=0.5mA
IC=5mA, VCE=5V
−
VCE=10V, IE= −5mA, f=100MHz
Electrical characteristic curves
1k
VCE=5V
500
Ta=100°C
Ta=25°C
200
100
Ta= 40°C
50
20
10
5
2
1
100∝ 200∝ 500∝ 1m 2m
5m 10m 20m 50m 100m
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain
vs. Collector current
1
IC/IB=20/1
500m
200m
100m
50m
20m
10m
5m
Ta=100°C
Ta=25°C
Ta= 40°C
2m
1m
100∝ 200∝ 500∝ 1m 2m
5m 10m 20m 50m 100m
COLLECTOR CURRENT : IC (A)
Fig.2 Collector-Emitter saturation voltage
vs. Collector current
Data Sheet
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○c 2009 ROHM Co., Ltd. All rights reserved.
2009.06 - Rev.C
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