RB081L-20 Просмотр технического описания (PDF) - ROHM Semiconductor
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RB081L-20 Datasheet PDF : 7 Pages
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RB081L-20
Data Sheet
2
1.5
1
0.5
0
0
Sin(θ＝180)
DC
D=1/2
5
10
15
20
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
10
9
8
7
6
5
4
3
2
1
0
0
0A
Io
0V
t
VR
D=t/T
VR=10V
T Tj=125℃
DC
D=1/2
Sin(θ＝180)
25
50
75 100 125
AMBIENT TEMPERATURE:Ta(℃)
Derating Curveﾞ(Io-Ta)
10
9
8
7
6
5
4
3
2
1
0
0
DC
D=1/2
0A
Io
0V
VR
t
D=t/T
VR=10V
T Tj=125℃
-
Sin(θ＝180)
25
50
75 100 125
CASE TEMPARATURE:Tc(℃)
Derating Curveﾞ(Io-Tc)
30
No break at 30kV
25
20
AVE:24.8kV
15
10
5
0
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
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2011.04 - Rev.B
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