RB081L-20 Просмотр технического описания (PDF) - ROHM Semiconductor
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RB081L-20 Datasheet PDF : 7 Pages
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RB081L-20
Data Sheet
10
Ta=75℃
1 Ta=125℃
Ta=25℃
1000000
100000
10000
0.1
Ta=-25℃
1000
100
0.01
10
0.001
1
0 100 200 300 400 500 600
0
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
5 10 15 20 25 30
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
1000
100
10
1
0
f=1MHz
5 10 15 20 25 30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
400
1000
950
Ta=25℃
IF=5A
900
Ta=25℃
940
VR=20V
Ta=25℃
f=1MHz
390
n=30pcs
800
n=30pcs
930
VR=0V
700
920
n=10pcs
380
600
910
500
900
370
400
890
300
880
360
AVE:380.3mV
350
200
100
AVE:201.3uA
0
870
AVE:898.1pF
860
850
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
300
30
250
Ifsm
1cyc
25
200
8.3ms
20
150
15
300
Ta=25℃
IF=0.5A
250
IR=1A
Irr=0.25*IR
n=10pcs
200
150
Ifsm
8.3ms 8.3ms
1cyc
100
50
AVE:196.0A
0
IFSM DISRESION MAP
10
AVE:11.7ns
5
0
trr DISPERSION MAP
100
50
0
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
300
250
200
150
100
50
0
1
Ifsm
t
1000
100
Mounted on epoxy board
Rth(j-a)
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
10
1
0.1
0.001
IM=100mA
Rth(j-c)
IF=1A
1ms time
300us
0.1
10
TIME:t(s)
Rth-t CHARACTERISTICS
1000
5
4
D=1/2
3
DC
Sin(θ＝180)
2
1
0
0
2
4
6
8
10
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
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2011.04 - Rev.B
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