RB081L-20 Просмотр технического описания (PDF) - ROHM Semiconductor
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производитель
RB081L-20 Datasheet PDF : 7 Pages
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Data Sheet
Shottky barrier diode
RB081L-20
Applications
General rectification
Dimensions (Unit : mm)
Features
1) Small power mold type. (PMDS)
2) Low VF, Low IR.
3) High reliability.
Construction
Silicon epitaxial planar
2.6±0.2
39
①②
1.5±0.2
0.1±0.02
0.1
2.0±0.2
ROHM : PMDS
JEDEC : SOD-106
① ② Manufacuture Date
Land size figure (Unit : mm)
2.0
PMDS
Structure
Taping specifications (Unit : mm)
2.0±0.05
4.0±0.1
φ1.55 ±0.05
0.3
2.9±0.1
4.0±0 .1
φ1.55
2 .8MAX
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
VRM
25
V
Reverse voltage (DC)
VR
20
V
Average rectified forward current (*1)
Io
5
A
Forward current surge peak (60Hz・1cyc)
IFSM
70
A
Junction temperature
Tj
125
°C
Storage temperature
Tstg
40 to 125
°C
(*1)Mounted on epoxy board. 180°Half sine wave
Electrical characteristics (Ta=25°C)
Parameter
Forward voltage
Reverse current
Symbol Min. Typ. Max.
VF
-
-
0.45
IR
-
-
700
Unit
Conditions
V
IF=5.0A
μA
VR=20V
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1/3
2011.04 - Rev.B
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