BD237 Просмотр технического описания (PDF) - Continental Device India Limited
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BD237 Datasheet PDF : 4 Pages
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EPITAXIAL SILICON POWER TRANSISTORS
ECB
BD233
BD235
BD237
NPN
BD234
BD236
BD238
PNP
TO126
Plastic Package
ELECTRICAL CHARACTERISTICS (TC=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
DC Current Gain
*hFE
IC=150mA, VCE=2V
IC=1.0A, VCE=2V
Current Gain Bandwidth Product
fT
IC=250mA, VCE=10V
*hFE1 / hFE2
Matched Pairs
IC=150mA, VCE=2V
*Pulsed Pulse Duration=300µs, Duty Cycle=1.5%
MIN TYP MAX UNIT
40
25
3
MHz
1.6
Continental Device India Limited
Data Sheet
Page 2 of 4
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