DTB114ES Просмотр технического описания (PDF) - ROHM Semiconductor
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DTB114ES Datasheet PDF : 3 Pages
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DTB114EK
Data Sheet
Electrical characteristics (Ta=25C)
Parameter
Symbol Min.
Input voltage
Output voltage
Input current
Output current
VI(off)
−
VI(on)
−3
VO(on)
−
II
−
IO(off)
−
DC current gain
GI
56
Input resistance
R1
7
Resistance ratio
R2/R1 0.8
Transition frequency
fT ∗ −
∗ Characteristics of built-in transistor
Typ.
−
−
−0.1
−
−
−
10
1
200
Max.
−0.5
−
−0.3
−0.88
−0.5
−
13
1.2
−
Unit
V
V
mA
μA
−
kΩ
−
MHz
Conditions
VCC= −5V, IO= −100μA
VO= −0.3V, IO= −10mA
IO/II= −50mA/−2.5mA
VI= −5V
VCC= −50V, VI=0V
VO= −5V, IO= −50mA
−
−
VCE= −10V, IE=50mA, f=100MHz
Electrical characteristic curves
-100
VO= −0.3V
-50
-20
-10
-5
-2
-1
-500m
Ta= −40 C
25 C
100 C
-200m
-100m
-500μ -1m -2m -5m -10m -20m -50m-100m-200m -500m
OUTPUT CURRENT : IO (A)
Fig.1 Input voltage vs. output current
(ON characteristics)
-10m
-5m Ta= 100 C
-2m
25 C
−40 C
-1m
-500μ
-200μ
VCC= −5V
-100μ
-50μ
-20μ
-10μ
-5μ
-2μ
-1μ
0 -0.5 -1 -1.5 -2 -2.5 -3
INPUT VOLTAGE : VI (off) (V)
Fig.2 Output current vs. input voltage
(OFF characteristics)
1k
500
200 Ta=100 C
25 C
100
−40 C
50
VO= −5V
20
10
5
2
1
-500μ -1m -2m -5m -10m -20m -50m -100m -200m -500m
OUTPUT CURRENT : IO (A)
Fig.3 DC current gain vs. output
current
-1
-500m
Ta=100 C
-200m
25 C
−40 C
-100m
-50m
lO/lI=20
-20m
-10m
-5m
-2m
-1m
-500μ -1m -2m -5m -10m -20m -50m -100m -200m -500m
OUTPUT CURRENT : IO (A)
Fig.4 Output voltage vs. output current
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○c 2009 ROHM Co., Ltd. All rights reserved.
2009.06 - Rev.B
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