2SC3391 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
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2SC3391 Datasheet PDF : 5 Pages
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2SC3391
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
Unit
30
V
20
V
4
V
20
mA
200
mW
150
°C
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Collector to base breakdown
voltage
V(BR)CBO
30
Collector to emitter breakdown V(BR)CEO 20
voltage
Emitter to base breakdown
voltage
V(BR)EBO
4
Collector cutoff current
I CBO
—
DC current transfer ratio
hFE*1
60
Base to emitter voltage
VBE
—
Collector to emitter saturation VCE(sat) —
voltage
Gain bandwidth product
fT
450
Collector output capacitance Cob
—
Power gain
PG
17
Typ
—
—
—
—
—
0.72
0.17
940
0.9
20
Noise figure
NF
—
3.5
Note: 1. The 2SC3391 is grouped by hFE as follows.
B
C
60 to 120 100 to 200
Max
—
—
—
0.5
200
—
—
—
1.2
—
5.5
Unit
V
V
V
µA
V
V
MHz
pF
dB
dB
Test conditions
IC = 10 µA, IE = 0
IC = 1 mA, RBE = ∞
IE = 10 µA, IC = 0
VCB = 10 V, IE = 0
VCE = 6 V, IC = 1 mA
VCE = 6 V, IC = 1 mA
IC = 20 mA, IB = 4 mA
VCE = 6 V, IC = 5 mA
VCB = 10 V, IE = 0, f = 1 MHz
VCE = 6 V, IC = 1 mA,
f = 100 MHz
VCE = 6 V, IC = 1 mA,
Rg = 50 Ω, f = 100 MHz
See characteristic curves of 2SC535.
2
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