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TC682

Inverting Voltage Doubler

Microchip Technology 

TC682

1.0 ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings*

VIN .......................................................................+5.8V

VIN dV/dT ........................................................ 1V/sec

VOUT ...................................................................-11.6V

Short-Circuit Duration - VOUT ..................... Continuous

Power Dissipation (TA 70°C)

8-Pin PDIP ..............................................730 mW

8-Pin SOIC ..............................................470 mW

Operating Temperature Range.............-40°C to +85°C

Storage Temperature (Unbiased) .......-65°C to +150°C

*Stresses above those listed under “Absolute

Maximum Ratings” may cause permanent damage to

the device. These are stress ratings only and functional

operation of the device at these or any other conditions

above those indicated in the operation sections of the

specifications is not implied. Exposure to Absolute

Maximum Rating conditions for extended periods may

affect device reliability.

TC682 ELECTRICAL SPECIFICATIONS

Electrical Characteristics: Over operating temperature range, VIN = +5V, test circuit Figure 3-1 unless otherwise noted.

Symbol

Parameter

Min

Typ

Max

Units

Test Conditions

VIN

IIN

ROUT

Supply Voltage Range

Supply Current

VOUT Source Resistance

FOSC

PEFF

VOUTEFF

Oscillator Frequency

Power Efficiency

Voltage Conversion Efficiency

2.4

—

5.5

—

185

300

—

—

400

—

140

180

—

—

230

170

320

—

12

—

90

92

—

99

99.9

—

V

RL = 2 k

A

RL = , TA = 25°C

RL = 



IL– = 10 mA, TA = 25°C

IL– = 10 mA

IL– = 5 mA, VIN = 2.8V

kHz

%

RL = 2 k, TA = 25°C

%

VOUT, RL = 

DS21453D-page 2

 2002-2012 Microchip Technology Inc.

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