1N5818-E3/73 Просмотр технического описания (PDF) - Vishay Semiconductors
Номер в каталоге
Компоненты Описание
производитель
1N5818-E3/73 Datasheet PDF : 4 Pages
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1000
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
0.1
1
10
Reverse Voltage (V)
1N5817
100
Fig. 5 - Typical Junction Capacitance
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
1N5817 thru 1N5819
Vishay General Semiconductor
100
10
1
0.1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 7 - Typical Transient Thermal Impedance
10
0.1
1N5818 and 1N5819
1
10
100
Reverse Voltage (V)
Fig. 6 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-204AL (DO-41)
0.107 (2.7)
0.080 (2.0)
DIA.
1.0 (25.4)
MIN.
0.205 (5.2)
0.160 (4.1)
0.034 (0.86)
0.028 (0.71)
DIA.
1.0 (25.4)
MIN.
Document Number: 88525 For technical questions within your region, please contact one of the following:
Revision: 20-Oct-09
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
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