D10XB05 Просмотр технического описания (PDF) - Zibo Seno Electronic Engineering Co.,Ltd
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производитель
D10XB05 Datasheet PDF : 2 Pages
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Z ibo Seno Electronic Engineering Co., Ltd.
D10XB05-D10XB100
12
10
with heatsink
8
6
4
without heatsink
2
Resistive or
Inductive load
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
180
160
Single half-sine-wave
(JEDEC method)
TJ = 150°C
120
80
10
1.0
TJ = 25°C
0.1
Pulse width = 300µs
0.01
0
0.4
0.8
1.2
1.6 1.8
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics (per element)
100
Tj = 25°C
f = 1MHz
10
40
0
1
10
100
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Maximum Non-Repetitive Surge Current
1000
TJ = 150°C
100
TJ = 125°C
TJ = 100°C
10
1
1
10
100
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
D10XB05-D10XB100
1.0
TJ = 25°C
0.1
0 20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
2 of 2
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