VUO55-12NO7 Просмотр технического описания (PDF) - IXYS CORPORATION
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VUO55-12NO7 Datasheet PDF : 2 Pages
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VUO 55
I2t
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current per diode
IFSM: Crest value. t: duration
Fig. 3 I2t versus time (1-10 ms)
per diode
Fig. 4 Power dissipation versus direct output current and ambient temperature
Fig. 6 Transient thermal impedance per diode
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Fig. 5 Maximum forward current at
case temperature
Constants for ZthJC calculation:
i
Rthi (K/W)
1
0.036
2
0.149
3
0.615
4
1.9
ti (s)
0.013
0.034
1.35
23.0
Constants for ZthJK calculation:
i
R (K/W)
thi
1
0.036
2
0.149
3
0.615
4
1.9
5
0.36
t (s)
i
0.013
0.034
1.35
23.0
52.0
2-2
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