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MB1S Просмотр технического описания (PDF) - Foshan Blue Rocket Electronics Co.,Ltd.

Номер в каталоге
Компоненты Описание
производитель
MB1S
FOSHAN
Foshan Blue Rocket Electronics Co.,Ltd. FOSHAN
MB1S Datasheet PDF : 6 Pages
1 2 3 4 5 6
MB1S~MB10S
Rev.C Feb.-2015
DATA SHEET
极限参数 / Absolute Maximum Ratings(Ta=25)
参数
Parameter
符号
Symbol
Maximum Repetitive Peak
Reverse Voltage
Maximum RMS voltage
Maximum DC Blocking
Voltage
Average Rectified Output
Currentat Ta = 50
Peak Forward Surge
Current 8.3 ms Single Half
Sine Wave Superimposed
on Rated Load (JEDEC
Method)
Typical Junction
CapacitanceNote1
Typical Thermal
ResistanceNote2
Typical Thermal
ResistanceNote2
Operating and Storage
Temperature Range
VRRM
VRMS
VDC
Io
IFSM
Cj
RθJA
RθJL
Tj,Tstg
MB1S
100
70
100
MB2S
200
140
200
数值
Rating
MB4S MB6S
400
600
280
420
400
600
0.8
30
13
95
30
-55~+150
Note:
1. Measured at 1MHz and applied reverse voltage of 4 V D.C.
2. Mounted on glass epoxy PC board with 4×( 5×5mm2copper pad..
MB8S
800
560
800
单位
MB10S
Unit
1000
V
700
V
1000
V
A
A
pF
/W
/W
电性能参数 / Electrical Characteristics(Ta=25)
参数
Parameter
Maximum Forward
Voltage
Maximum DC
Reverse Current at
Maximum DC
Blocking Voltage
符号
Symbol
VF
测试条件
Test
condition
IF=0.4A
IF=0.8A
IR
Ta=25
Ta=125
数值
Rating
1.0
1.1
5.0
40
单位
Unit
V
μA
http://www.fsbrec.com
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