MB1S_99 Просмотр технического описания (PDF) - Fairchild Semiconductor
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Компоненты Описание
производитель
MB1S_99 Datasheet PDF : 3 Pages
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MB1S - MB8S
Features
• Low leakage
• Surge overload rating:
35 amperes peak.
• Ideal for printed circuit board.
4
3
––
~
1
+
~
2
SOIC-4
0.031(0.8)
0.0191(0.5)
Polarity symbols molded
or marking on body
0.106(2.7)
0.09(2.3)
0.193(4.9)
0.177(4.5)
1: ~
2: ~
3: +
4 : ––
0.067(1.7)
0.057(1.3)
0.051(1.3)
0.035(0.9)
0.014(0.35)
0.006(0.15)
0.106(2.7)
0.09(2.3)
0.118(3.0)
MAX
0.008(0.2)
0.275( 7) MAX
0.165(4.2)
0.150(3.8)
0.067(1.7)
0.057(1.3)
C0.02(0.5)
0.043(1.1)
0.027(0.7)
Dimensions are in:
inches (mm)
0.5 Ampere Glass Passivated Bridge Rectifiers
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
IO
if(surge)
PD
RqJA
RqJL
Tstg
TJ
Average Rectified Current
@ TA = 50°C
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient,** per leg
Thermal Resistance, Junction to Lead,** per leg
Storage Tem perature Range
Operating Junction Tem perature
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**Device mounted on PCB with 0.5-0.5" (13x13 mm) lead length.
0.5
35
1.4
11
85
20
-55 to +150
-55 to +150
Units
A
A
W
mW/°C
°C/W
°C/W
°C
°C
Electrical Characteristics TA = 25°C unless otherwise noted
Parameter
1S
Peak Repetitive Reverse Voltage
100
Maximum RMS Bridge Input Voltage
70
DC Reverse Voltage (Rated VR)
100
Maximum Reverse Leakage,
per leg @ rated VR TA = 25°C
TA = 125°C
Maximum Forward Voltage Drop,
per bridge
I2t rating for fusing
@ 0.5 A
t < 8.3 ms
Typi cal Junction Capacitance, per leg
VR = 4.0 V, f = 1.0 MHz
Device
2S
4S
6S
200
400
600
140
280
420
200
400
600
5.0
0.5
1.0
5.0
13
Units
8S
800
V
560
V
800
V
mA
mA
V
A2t
pF
ã1999 Fairchild Semiconductor Corporation
MB1S-MB8S, Rev. A
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