MB1S Просмотр технического описания (PDF) - Shenzhen Ping Sheng Electronics Co., Ltd.
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Компоненты Описание
производитель
MB1S
Shenzhen Ping Sheng Electronics Co., Ltd.
MB1S Datasheet PDF : 2 Pages
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MB05S THRU MB10S
Features
• Surface Mount Package
• Glass Passivated Diode Construction
• Moisture Resistant Epoxy Case
• High Surge Current Capability
0.5Amp Single Phase
Glass Passivated
Bridge Rectifier
50 to 1000 Volts
Maximum Ratings
• Operating Temperature: -55°C to +150°C
• Storage Temperature: -55°C to +150°C
MCC
Catalog
Number
MB05S
MB1S
MB2S
MB4S
MB6S
MB8S
MB10S
Device
Marking
MB05S
MB1S
MB2S
MB4S
MB6S
MB8S
MB10S
Maximum
Rccurrent
Peak Reverse
Voltage
50V
100V
200V
400V
600V
800V
1000V
Maximum
RMS
Voltage
35V
70V
140V
280V
420V
560V
700V
Maximum
DC
Blocking
Voltage
50V
100V
200V
400V
600V
800V
1000V
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
IF(AV)
0.5A
0.8A
Note1 TA = 30°C
Note2 TA = 30°C
Peak Forward Surge
IFSM
Current
30A 8.3ms, half sine
Maximum
Instantaneous
Forward Voltage
Maximum DC
VF
1.0V IFM = 0.5A;
TA = 25°C
Reverse Current At
IR
5 µA TA = 25°C
Rated DC Blocking
Voltage
Typical Junction
Capacitance
CJ
25pF Measured at
1.0MHz, VR=4.0V
Note1. Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
Note2. On alum: substrate P.C.B with an rea of 0.8 x 0.8 x 0.25”
( 20 x 20 x 6.4mm ) mounte on 0.05 x 0.05 “( 13 x 13 mm )
solder pad.
*Pulse Test: Pulse Width 300µsec, Duty Cycle 1%
MBS -1
∼-
E
∼+
C
A
K
J
G
H
L
BD
F
Notch in case
M
N
.252
.017
.090
.004
.021
.055
-----
M
.040
.008
.272
.029
.106
.008
.023
.065
.200
.050
.014
6.40
0.45
2.30
0.10
0.53
1.40
-----
1.02
0.15
6.91
0.75
2.70
0.20
0.58
1.65
5.08
1.27
0.35
Web Site: WWW.PS-PFS.COM
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