MB05S Просмотр технического описания (PDF) - HY ELECTRONIC CORP.
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производитель
MB05S Datasheet PDF : 3 Pages
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MB05S thru MB10S
SURFACE MOUNT GLASS PASSIVATED
BRIDGE RECTIFIERS
REVERSE VOLTAGE - 50 to 1000 Volts
FORWARD CURRENT - 0.8 Ampere
FEATURES
●Rating to 1000V PRV
●Ideal for printed circuit board
●Reliable low cost construction utilizing
molded plastic technique results in inexpensive product
●Lead tin plated copper
MECHANICAL DATA
●Polarity:Symbol molded on body
●Weight: 0.0044 ounces,0.125 grams
●Mounting position :Any
MBS-2
~~
+-
0.8)
0.5) .106(2.7)
.09(2.3)
.193(4.9)
.177(4.5)
.02(0.5)*45°
.067(1.7)
.057(1.3)
.051(1.3)
.035(0.9)
.014(.35)
.006(.15)
.275(7.0)MAX
.165(4.2)
.150(3.8)
.043(1.1)
.027(0.7)
.067(1.7)
.057(1.3)
.106(2.7)
.09(2.3)
.008(0.2)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current (Note 1)
@TA=40 ℃
Peak Forward Surge Current
8.3ms Single Half Sine-Wave
Super Imposed on Rated Load(JEDEC Method)
Peak Forward Voltage at 0.8A DC
Maximum DC Reverse Current
@TJ=25℃
at Rated DC Bolcking Voltage
I2t Rating for Fusing(t<8.3ms)
@TJ=125℃
Typical Junction Capacitance Per Element (Note2)
Typical Thermal Resistance (Note3)
Operating Temperature Range
Storage Temperature Range
SYMBOL MB05S
VRRM
50
VRMS
35
VDC
50
I(AV)
IFSM
VF
IR
I2t
CJ
RθJC
TJ
TSTG
NOTES:1.Mounted on P.C. board.
2.Measured at1.0MHz and applied reverse voltage of 4.0V DC.
3.Thermal resistance junction to case
4.The typical data above is for reference only(典型值仅供参考).
MB1S
100
70
100
MB2S
200
140
200
MB4S
400
280
400
0.8
MB6S
600
420
600
30
1.1
5.0
500
3.735
15
75
-55 to +150
-55 to +150
MB8S
800
560
800
MB10S
1000
700
1000
UNIT
V
V
V
A
A
V
μA
A2s
pF
℃/W
℃
℃
Rev. 2, 16-Mar-2017
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