LL4448 Просмотр технического описания (PDF) - General Semiconductor

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LL4448

Small Signal Diodes

General Semiconductor 

LL4448

ELECTRICAL CHARACTERISTICS

Ratings at 25 °C ambient temperature unless otherwise specified

Symbol

Min.

Typ.

Forward Voltage

at IF = 5 mA

at IF = 100 mA

VF

0.62

–

VF

–

–

Leakage Current

at VR = 20 V

at VR = 75 V

at VR = 20 V, Tj = 150 °C

IR

–

–

IR

–

–

IR

–

–

Capacitance

at VF = VR = 0

Ctot

–

–

Reverse Recovery Time

trr

from IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 Ω

–

–

Thermal Resistance

Junction to Ambient Air

RthJA

–

–

Rectification Efficiency

at f = 100 MHz, VRF = 2 V

ηv

0.45

–

1) Valid provided that electrodes are kept at ambient temperature.

Max.

0.72

1

25

5

50

4

4

0.351)

–

Unit

V

V

nA

µA

µA

pF

ns

K/mW

–

Rectification Efficiency Measurement Circuit

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