DTC114TE Просмотр технического описания (PDF) - Secos Corporation.
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DTC114TE Datasheet PDF : 2 Pages
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Elektronische Bauelemente
DTC114TE/DTC114TUA/DTC114TKA
DTC114TCA/TC114TSA
NPN Digital Transistors (Built-in Resistors)
MAXIMUM RATINGS* TA=25℃ unless otherwise noted
Symbol
Parameter
LIMITS(DTC114T□)
E
UA
KA
CA
SA
VCBO
Collector-Base Voltage
50
VCEO
VEBO
IC
PC
Tj
Collector-Emitter Voltage
50
Emitter-Base Voltage
5
Collector Current -Continuous
100
Collector Dissipation
150
200
300
Junction temperature
150
TJ, Tstg
Junction and Storage Temperature
ELECTRICAL CHARACTERISTICS (Tamb=25℃
-55~+150
unless otherwise specified)
Parameter
Symbol
Test conditions
MIN TYP
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
fT
Ic=50µA,IE=0
Ic=1mA,IB=0
IE=50µA,IC=0
VCB=50V,IE=0
VEB=4V,IC=0
VCE=5V,IC=1mA
IC=10mA,IB=1mA
VCE=10V,IE=-5mA, f=100MHz
50
50
5
100 300
250
Imput resistor
R1
7
10
Units
V
V
V
mA
mW
℃
℃
MAX
0.5
0.5
600
0.3
13
UNIT
V
V
V
uA
uA
V
MHz
kΩ
Typical Characteristics
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individua
Page 2 of 2
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