BA5830FM Просмотр технического описания (PDF) - ROHM Semiconductor
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BA5830FM Datasheet PDF : 5 Pages
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○ Electrical characteristics (Unless otherwise noted, Ta=25℃, PreVcc=PowVcc=8V, BIAS=2.5V, RL=8Ω)
Parameter
Quiescent dissipation current
Symbol
IQ
MIN TYP MAX Unit
-
22 32 mA RL=∞
Condition
<Driver>
Output offset voltage
Voof
-50
0
50 mV
Maximum output amplitude
VOM
5.4 6.0
-
V
Closed circuit voltage gain（CH1,2,3,SLED） Gvc
10.0 11.7 13.4 dB VIN=±0.5V
Closed circuit voltage gain（LOADING）
MUTE terminal low-level input voltage
MUTE terminal high-level input voltage
CNT terminal low-level input voltage
CNT terminal high-level input voltage
GvcLD
VML
VMH
VCNTL
VCNTH
16.0 17.7 19.4
-
-
0.5
2.0
-
-
-
-
0.5
2.0
-
-
dB VIN=±0.5V
V
V
V
V
LDIN terminal voltage (SLED input)
VLDIN
-
0.1 0.3
V CNT=’L’
<Pre OP amp>
Internal bias voltage
VBIN
1.53 1.65 1.77
V CNT=’H’
Input offset voltage
VOFOP -6
0
6
mV
Input bias current
IBOP
-
-
300 nA
High-level output voltage
VOHOP 7.5 7.9
-
V
low-level output voltage
VOLOP
-
0.2 0.5
V
Output driving current sink
ISI
0.5
-
-
mA
Output driving current source
ISO
0.5
-
-
mA
Slew rate
SROP
-
1
-
V/μs 100KHz square wave, 2Vp-p input
<Regulator>
Output voltage
Vreg
4.79 5.04 5.29 V IREG=150mA
Load regulation
Supply voltage regulation
ΔVRL -40
0
20 mV IREG=0~500mA、5Vsetup
ΔVVCC
-20
10
40
mV VCC=5.5~14V、5Vsetup
REG.P terminal voltage
VREGP 2.28 2.4 2.52 V
○ Package outlines : HSOP-M28
（ Max scale include. BURR：18.85）
BA5830FM
1PIN MARK
Lot No.
（UNIT : mm）
REV. A
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