DTC114EB Просмотр технического описания (PDF) - ROHM Semiconductor
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DTC114EB Datasheet PDF : 4 Pages
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DTC114EB / DTC114EM / DTC114EE / DTC114EUA / DTC114EKA
Data Sheet
zPackaging specifications
Package
Packaging type
Code
VMN3
Taping
T2L
Part No.
Basic ordering
unit (pieces)
8000
DTC114EB
DTC114EM
−
DTC114EE
−
DTC114EUA
−
DTC114EKA
−
VMT3
Taping
T2L
8000
−
−
−
−
EMT3
Taping
TL
3000
−
−
−
−
UMT3
Taping
T106
SMT3
Taping
T146
3000
3000
−
−
−
−
−
−
−
−
zEquivalent circuit
R1
IN
R2
OUT
GND
IN
R1=R2=10kΩ
GND
OUT
zAbsolute maximum ratings (Ta=25°C)
Parameter
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
Limits
Symbol
Unit
DTC114EB DTC114EM DTC114EE DTC114EUA DTC114EKA
VCC
50
V
VIN
−10 to +40
V
IO
50
mA
IC(Max.)
100
PD
150
200
mW
Tj
150
°C
Tstg
−55 to +150
°C
zElectrical characteristics (Ta=25°C)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
∗ Characteristics of built-in transistor
Symbol
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R2/R1
fT ∗
Min.
−
3
−
−
−
30
7
0.8
−
Typ.
−
−
0.1
−
−
−
10
1
250
Max.
0.5
−
0.3
0.88
0.5
−
13
1.2
−
Unit
V
V
mA
µA
−
kΩ
−
MHz
Conditions
VCC=5V, IO=100µA
VO=0.3V, IO=10mA
IO/II=10mA/0.5mA
VI=5V
VCC=50V, VI=0V
VO=5V, IO=5mA
−
−
VCE=10V, IE=−5mA, f=100MHz
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○c 2009 ROHM Co., Ltd. All rights reserved.
2009.08 - Rev.D
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