3N60A4 Просмотр технического описания (PDF) - Fairchild Semiconductor
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3N60A4 Datasheet PDF : 8 Pages
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HGTD3N60A4S, HGTP3N60A4
Typical Performance Curves Unless Otherwise Specified (Continued)
700
FREQUENCY = 1MHz
600
500
400
CIES
300
CRES
200
100
0
0
COES
20
40
60
80
100
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
2.7
DUTY CYCLE < 0.5%, TJ = 25oC
2.6
PULSE DURATION = 250µs,
2.5
2.4
ICE = 4.5A
2.3
ICE = 3A
2.2
2.1
ICE = 1.5A
2.0
8
10
12
14
16
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs GATE TO EMITTER VOLTAGE
100
0.5
0.2
10-1 0.1
0.05
0.02
0.01
10-2
SINGLE PULSE
10-5
10-4
10-3
10-2
t1, RECTANGULAR PULSE DURATION (s)
t1
PD
t2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZqJC X RqJC) + TC
10-1
100
FIGURE 19. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
©2003 Fairchild Semiconductor Corporation
HGTD3N60A4S, HGTP3N60A4 Rev. B1
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