3N60A4 Просмотр технического описания (PDF) - Fairchild Semiconductor
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3N60A4 Datasheet PDF : 8 Pages
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HGTD3N60A4S, HGTP3N60A4
Typical Performance Curves Unless Otherwise Specified (Continued)
112
VGE = 15V, TJ = 125oC
104
96
VGE = 12V, TJ = 125oC
88
80
VGE = 15V, TJ = 25oC
72
VGE = 12V, TJ = 25oC
64
56
RG = 50Ω, L = 1mH, VCE = 390V
48
1
2
3
4
5
6
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
96
RG = 50Ω, L = 1mH, VCE = 390V
88
TJ = 125oC, VGE = 12V OR 15V
80
72
64
56
48
TJ = 25oC, VGE = 12V OR 15V
40
1
2
3
4
5
6
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
20
DUTY CYCLE < 0.5%, VCE = 10V
PULSE DURATION = 250µs
16
12
8
TJ = 25oC
4
TJ = 125oC
TJ = -55oC
0
4
6
8
10
12
14
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
16 IG(REF) = 1mA, RL = 100Ω, TJ = 25oC
14
12
VCE = 600V
10
8
VCE = 200V
VCE = 400V
6
4
2
0
0
4
8
12
16
20
24
28
QG, GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
250
RG = 50Ω, L = 1mH, VCE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF
200
ICE = 4.5A
150
100 ICE = 3A
ICE = 1.5A
50
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
TEMPERATURE
1000
TJ = 125oC, L = 1mH, VCE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF
ICE = 4.5A
ICE = 3A
100
ICE = 1.5A
30
3
10
100
RG, GATE RESISTANCE (Ω)
1000
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
©2003 Fairchild Semiconductor Corporation
HGTD3N60A4S, HGTP3N60A4 Rev. B1
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