2N6428A Просмотр технического описания (PDF) - Fairchild Semiconductor

Номер в каталоге

Компоненты Описание

производитель

2N6428A

NPN Epitaxial Silicon Transistor

Fairchild Semiconductor 

2N6428/6428A

Amplifier Transistor

• Collector-Emitter Voltage: VCEO= 50V

• Collector Dissipation: PC (max)=625mW

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25°C unless otherwise noted

Symbol

Parameter

VCBO

Collector-Base Voltage

VCEO

Collector-Emitter Voltage

VEBO

Emitter-Base Voltage

IC

Collector Current

PC

Collector Dissipation

TJ

Junction Temperature

TSTG

Storage Temperature

• Refer to 2N5088 for graphs

1

TO-92

1. Emitter 2. Base 3. Collector

Value

60

50

6

200

625

150

-55 ~ 150

Units

V

V

V

mA

mW

°C

°C

Electrical Characteristics Ta=25°C unless otherwise noted

Symbol

BVCBO

BVCEO

ICBO

ICEO

IEBO

hFE

VCE (sat)

VBE (on)

Cob

fT

NF/NV

Parameter

Collector-Base Breakdown Voltage

* Collector-Emitter Breakdown Voltage

Collector Cut-off Current

Collector Cut-off Current

Emitter Cut-off Current

* DC Current Gain

* Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

Output Capacitance

Current Gain Bandwidth Product

Noise Figure/Noise Voltage Level

: 2N6428

: 2N6428A

Test Condition

IC=100µA, IE=0

IC=1mA, IB=0

VCB=30V, IE=0

VCE=30V, IB=0

VBE=5V, IC=0

VCE=5V, IC=10µA

VCE=5V, IC=100µA

VCE=5V, IC=1mA

VCE=5V, IB=10mA

IC=10mA, IB=0.5mA

IC=100mA, IB=5mA

IC=1mA, VCE=5V

VCB=10V, IE=0, f=1MHz

VCE=5V, IC=1mA, f=100MHz

VCE=5V, IC=100µA

(1) RS=10KΩ, BW=1Hz

f=100Hz

Min.

60

50

250

250

250

250

0.56

100

: 2N6428

: 2N6428A

(2) RS=50KΩ, BW=15.7Hz

f=10Hz-10KHz

: 2N6428

: 2N6428A

(3) RS=500Ω, BW=1Hz

f=10Hz

Typ.

Max.

10

25

10

Units

V

V

nA

nA

650

0.2

V

0.6

V

0.66

V

3

pF

700 MHz

3/18.1 dB/nV

2/16.2 dB/nV

6/5.7 dB/nV

4/4.6 dB/nV

3.5/4.3 dB/nV

3/4.1 dB/nV

©2000 Fairchild Semiconductor International

Rev. A, February 2000

Share Link: