74ABT648PW,118 Просмотр технического описания (PDF) - NXP Semiconductors.
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74ABT648PW,118 Datasheet PDF : 19 Pages
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Philips Semiconductors
74ABT648
Octal transceiver/register; inverting; 3-state
10. Static characteristics
Table 7: Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
Tamb = 25 °C
VIK
input diode voltage
VOH
HIGH-level output voltage
VOL
LOW-level output voltage
VRST
ILI
power-up output low voltage
input leakage current
control pins
VCC = 4.5 V; IIK = −18 mA
VCC = 4.5 V; VI = VIL or VIH
IO = −3 mA
IO = −32 mA
VCC = 5.0 V; VI = VIL or VIH
IO = −3 mA
VCC = 4.5 V; VI = VIL or VIH
IO = 64 mA
VCC = 5.5 V; IO = 1 mA; VI = GND or VCC
VCC = 5.5 V; VI = GND or 5.5 V
data pins
IOFF
IPU, IPD
IOZ
power-off leakage current
power-up or power-down
3-state output current
3-state output current
ICEX
output HIGH-state leakage
current
VCC = 0 V; VO or VI ≤ 4.5 V
VCC = 2.1 V; VO = 0.5 V; VI = GND or VCC;
VOE = don’t care
VCC = 5.5 V; VI = VIL or VIH
output HIGH-state at VO = 2.7 V
output LOW-state at VO = 0.5 V
VCC = 5.5 V; VO = 5.5 V; VI = GND or VCC
IO
output current
VCC = 5.5 V; VO = 2.5 V
ICC
quiescent supply current
VCC = 5.5 V; VI = GND or VCC
outputs HIGH-state
outputs LOW-state
outputs 3-state
∆ICC
CI
CI/O
additional supply current per
data input pin
input capacitance
I/O capacitance
one data input at 3.4 V and other inputs at
VCC or GND; VCC = 5.5 V
VI = 0 V or VCC
outputs disabled; VO = 0 V or VCC
Min
-
2.5
2.0
3.0
-
[1] -
-
-
-
[2] -
-
-
-
[3] −50
-
-
-
[4]
-
-
Typ Max Unit
−0.9 −1.2 V
3.2 -
V
2.3 -
V
3.7 -
V
0.42 0.55 V
0.13 0.55 V
±0.01 ±1.0 µA
±5 ±100 µA
±5.0 ±100 µA
±5.0 ±50 µA
5.0 50 µA
−5.0 −50 µA
5.0 50 µA
−65 −180 mA
110 250 µA
20 30 mA
110 250 µA
0.3 1.5 mA
4
-
pF
7
-
pF
9397 750 14858
Product data sheet
Rev. 04 — 27 April 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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