MPSA05 Просмотр технического описания (PDF) - Diotec Semiconductor Germany

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MPSA05

General Purpose Si-Epitaxial PlanarTransistors

Diotec Semiconductor Germany  

Characteristics (Tj = 25°C)

Emitter-Base cutoff current – Emitter-Basis-Reststrom

VEB = 4 V, (C open)

Gain-Bandwidth Product – Transitfrequenz

IC = 10 mA, VCE = 2 V, f = 100 MHz

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

Recommended complementary PNP transistors

Empfohlene komplementäre PNP-Transistoren

MPSA05 ... MPSA06

Kennwerte (Tj = 25°C)

Min.

Typ.

Max.

IEB0

–

–

100 nA

fT 100 MHz

–

–

RthA

< 200 K/W 1)

MPSA55, MPSA56

120

[%]

100

80

60

40

20

Ptot

0

0 TA 50

100

150 [°C]

Power dissipation versus ambient temperature 1)

Verlustleistung in Abh. von d. Umgebungstemp.1)

1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case

Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden

2

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