FDU6692 Просмотр технического описания (PDF) - Fairchild Semiconductor
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FDU6692 Datasheet PDF : 6 Pages
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Typical Characteristics
10
ID = 14A
8
6
VDS = 10V
15V
20V
4
2
0
0
5
10
15
20
25
30
35
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
1000
100
RDS(ON) LIMIT
10
1
VGS = 10V
SINGLE PULSE
0.1
RθJA = 96oC/W
TA = 25oC
100µs
1ms
10ms
100ms
1s
10s
DC
0.01
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
3000
2500
2000
CISS
f = 1MHz
VGS = 0 V
1500
1000
500
COSS
CRSS
0
0
5
10
15
20
25
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
80
SINGLE PULSE
RθJA = 96°C/W
60
TA = 25°C
40
20
0
0.1
1
10
100
t1, TIME (sec)
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.001
0.001
SINGLE PULSE
0.01
0.1
1
10
t1, TIME (sec)
RθJA(t) = r(t) + RθJA
RθJA = 96 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDD/ FDU6692 Rev. C(W)
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