FDU6692 Просмотр технического описания (PDF) - Fairchild Semiconductor
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FDU6692 Datasheet PDF : 6 Pages
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Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
WDSS
Drain-Source Avalanche Energy Single Pulse, VDD = 15 V, ID=14A
IAR
Drain-Source Avalanche Current
165 mJ
14
A
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA
30
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
26
mV/°C
IDSS
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V
1
µA
IGSSF
Gate–Body Leakage, Forward
VGS = 16 V, VDS = 0 V
100 nA
IGSSR
Gate–Body Leakage, Reverse
VGS = –16 V, VDS = 0 V
–100 nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
1
ID = 250 µA, Referenced to 25°C
VGS = 10 V, ID = 14 A
VGS = 4.5 V, ID = 13 A
VGS = 10 V, ID = 14 A, TJ = 125°C
VGS = 10 V, VDS = 5 V
50
VDS = 5 V,
ID = 14 A
1.6
3
V
–5
mV/°C
9.5 12
mΩ
11.5 14.5
16.5 18
A
54
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
2164
pF
357
pF
138
pF
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
(Note 2)
VDD = 15 V, ID = 1 A,
VGS = 10 V, RGEN = 6 Ω
VDS = 15 V,
VGS = 5 V
ID = 14 A,
9
18
ns
5
10
ns
35 56
ns
10 20
ns
18 25
nC
5
nC
5
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = 3.2 A (Note 2)
3.2
A
0.72 1.2
V
FDD/ FDU6692 Rev. C(W)
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