MMBTA56(2006) Просмотр технического описания (PDF) - Fairchild Semiconductor

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Компоненты Описание

производитель

MMBTA56
(Rev.:2006)

PNP General Purpose Amplifier

Fairchild Semiconductor 

Electrical Characteristics

TA = 25°C unless otherwise specified.

Parameter

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage*

Collector-Base Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector-Cutoff Current

Collector-Cutoff Current

ON CHARACTERISTICS

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

SMALL SIGNAL CHARACTERISTICS

Current Gain – Bandwidth Product

Symbol

Test Condition

V(BR)CEO

V(BR)CBO

V(BR)EBO

ICEO

ICBO

IC = -1.0mA, IB = 0

IC = -100µA, IE = 0

IE = -100µA, IC = 0

VCE = -60V, IB = 0

VCB = -80V, IE = 0

hFE

VCE(sat)

VBE(on)

IC = -10mA, VCE = -1.0V

IC = -100mA, VCE = -1.0V

IC = -100mA, IB = -10mA

IC = -100mA, VCE = -1.0V

fT

IC = -100mA, VCE = -1.0V,

f = 100MHz

Min. Max. Units

-80

V

-80

V

-4.0

V

-0.1

µA

-0.1

µA

100

100

-0.2

V

-1.2

V

50

MHz

*Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%

Note:

All voltages (V) and currents (A) are negative polarity for PNP transistors.

Spice Model

PNP

(Is=12.27p Xti=3 Eg=1.11 Vaf=100 Bf=91.63 Ne=1.531 Ise=12.27p Ikf=1.009 Xtb=1.5 Br=1.287 Nc=2 Isc=0 Ikr=0 Rc=.6

Cjc=48.28p Mjc=.5615 Vjc=.75 Fc=.5 Cje=106.7p Mje=.5168 Vje=.75 Tr=496.3n Tf=865.8p Itf=.2 Vtf=2 Xtf=.8 Rb=10)

2

MPSA56/MMBTA56/PZTA56 Rev. 1.0.2

www.fairchildsemi.com

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