DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

K6R1008C1D-JI12 Просмотр технического описания (PDF) - Samsung

Номер в каталоге
Компоненты Описание
производитель
K6R1008C1D-JI12 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
K6R1008C1D
Document Title
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating).
Operated at Commercial and Industrial Temperature Ranges.
PRELIMINARY
PRELPIrMeliImNAinRarYy
CMOS SRAM
Revision History
Rev. No.
Rev. 0.0
Rev. 0.1
Rev. 0.2
History
Initial release with Preliminary.
Current modify
1. Delete 15ns speed bin.
2. Change Icc for Industrial mode.
Item
ICC(Industrial)
10ns
12ns
Previous
85mA
75mA
Current
75mA
65mA
Draft Data
June. 8. 2001
September. 9. 2001
December.18
Remark
Preliminary
Preliminary
Preliminary
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Revision 0.2
December 2001

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]