K6R1016C1 Просмотр технического описания (PDF) - Samsung

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Компоненты Описание

производитель

K6R1016C1

64K x 16 Bit High-Speed CMOS Static RAM

Samsung 

K6R1016C1D

TIMING WAVEFORM OF WRITE CYCLE(2) (OE =Low fixed)

PRELIMINARY

CMOS SRAM

Address

CS

UB, LB

WE

Data in

Data out

tAS(4)

High-Z

tWC

tAW

tCW(3)

tBW

tWR(5)

tWP1(2)

tWHZ(6)

tDW

tDH

Valid Data

tOW

High-Z

(10)

(9)

TIMING WAVEFORM OF WRITE CYCLE(3) (CS=Controlled)

Address

CS

UB, LB

WE

Data in

Data out

tAS(4)

High-Z

tLZ

High-Z

tWC

tAW

tCW(3)

tBW

tWR(5)

tWP(2)

tWHZ(6)

tDW

tDH

Valid Data

High-Z

High-Z(8)

-8-

Rev. 3.0

July 2004

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