DTA114TUA_ Просмотр технического описания (PDF) - ROHM Semiconductor
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производитель
DTA114TUA_ Datasheet PDF : 4 Pages
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Transistors
DTA114TM / DTA114TE / DTA114TUA
DTA114TKA / DTA114TSA
!Absolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Limits(DTA114T )
Symbol
Unit
M E UA KA SA
VCBO
−50
V
VCEO
−50
V
VEBO
−5
V
IC
−100
mA
PC
150
200
300 mW
Tj
150
°C
Tstg
−55~+150
°C
!Electrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
∗ Transition frequency of the device
Symbol Min. Typ. Max. Unit
Conditions
BVCBO
−50
−
−
V IC=−50µA
BVCEO
−50
−
−
V IC=−1mA
BVEBO
−5
−
−
V IE=−50µA
ICBO
−
− −0.5 µA VCB=−50V
IEBO
−
−
−0.5 µA VEB=−4V
VCE(sat)
−
− −0.3 V IC/IB=−10mA/−1mA
hFE
100 250 600
− VCE=−5V, IC=−1mA
R1
7
10 13 kΩ
−
fT
−
250
− MHz VCE=−10V, IE=5mA, f=100MHz
∗
!Packaging specifications
Package
Package type
Code
VMT3
Taping
T2L
Type
Basic ordering
unit (pieces)
DTA114TM
DTA114TE
DTA114TUA
DTA114TKA
DTA114TSA
8000
−
−
−
−
EMT3
Taping
TL
3000
−
−
−
−
UMT3
Taping
T106
3000
−
−
−
−
SMT3
Taping
T146
3000
−
−
−
−
SPT
Taping
TP
5000
−
−
−
−
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