1N957B Просмотр технического описания (PDF) - Microsemi Corporation
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1N957B Datasheet PDF : 3 Pages
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SCOTTSDALE DIVISION
1N957B, -1 thru 1N992B, -1 DO-35
Silicon 500 mW Zener Diodes
ELECTRICAL CHARACTERISTICS* @ 25oC
JEDEC
TYPE
NUMBER
(Note 1)
NOMINAL
ZENER
VOLTAGE
(Note 2)
VZ
VOLTS
ZENER
TEST
CURRENT
IZT
mA
MAX. ZENER IMPEDANCE
(Note 3)
ZZT @ IZT
OHMS
ZZK @ IZK
OHMS
mA
MAX. DC
ZENER
CURRENT
(Note 4)
IZM
mA
MAX. SURGE
CURRENT
(Note 5)
IZSM
mA
MAX. REVERSE
LEAKAGE
CURRENT
IR @ VR
µA
VOLTS
MAX. TEMP.
COEFFICIENT
αVZ
%/oC
1N957B
1N958B
1N959B
1N960B
1N961B
6.8
18.5
4.5
700
1.0
55
7.5
16.5
5.5
700
.5
50
8.2
15.0
6.5
700
.5
45
9.1
14.0
7.5
700
.5
41
10
12.5
8.5
700
.25
38
300
150
5.2
+0.05
275
75
5.7
+0.058
250
50
6.2
+0.065
225
25
6.9
+0.068
200
10
7.6
+0.075
1N962B
1N963B
1N964B
1N965B
1N966B
11
11.5
9.5
700
.25
32
12
10.5
11.5
700
.25
31
13
9.5
13.0
700
.25
28
15
8.5
16
700
.25
25
16
7.8
17
700
.25
24
175
5
8.4
+0.076
160
5
9.1
+0.077
150
5
9.9
+0.079
130
5
11.4
+0.082
120
5
12.2
+0.083
1N967B
18
7.0
21
750
.25
20
1N968B
20
6.2
25
750
.25
18
1N969B
22
5.6
29
750
.25
16
1N970B
24
5.2
33
750
.25
15
1N971B
27
4.6
41
750
.25
13
110
5
13.7
+0.085
100
5
15.2
+0.086
90
5
16.7
+0.087
80
5
18.2
+0.088
70
5
20.6
+0.090
1N972B
30
4.2
49
1000
.25
12
1N973B
33
3.8
58
1000
.25
11
1N974B
36
3.4
70
1000
.25
10
1N975B
39
3.2
80
1000
.25
9.5
1N976B
43
3.0
93
1500
.25
8.8
65
5
22.8
+0.091
60
5
25.1
+0.092
55
5
27.4
+0.093
46
5
29.7
+0.094
44
5
32.7
+0.095
1N977B
47
2.7
105
1500
.25
7.9
1N978B
51
2.5
125
1500
.25
7.4
1N979B
56
2.2
150
2000
.25
6.8
1N980B
62
2.0
185
2000
.25
6.0
1N981B
68
1.8
230
2000
.25
5.5
40
5
35.8
+0.095
37
5
38.8
+0.096
35
5
42.6
+0.096
30
5
47.1
+0.097
28
5
51.7
+0.097
1N982B
75
1.7
270
2000
.25
5.0
1N983B
82
1.5
330
3000
.25
4.6
1N984B
91
1.4
400
3000
.25
4.1
1N985B
100
1.3
500
3000
.25
3.7
1N986B
110
1.1
750
4000
.25
3.3
26
5
56.0
+0.098
23
5
62.2
+0.098
21
5
69.2
+0.099
18
5
76.0
+0.11
16
5
83.6
+0.11
1N987B
1N988B
1N989B
1N990B
1N991B
1N992B
120
1.0
900
4500
.25
3.1
130
0.95
1100
5000
.25
2.7
150
0.85
1500
6000
.25
2.4
160
0.80
1700
6500
.25
2.2
180
0.68
2200
7100
.25
2.0
200
0.65
2500
8000
.25
1.8
15
5
91.2
+0.11
13
5
98.8
+0.11
12
5
114.0
+0.11
11
5
121.6
+0.11
10
5
136.8
+0.11
9
5
152.0
+0.11
* JEDEC Registered Data
NOTE 1: The JEDEC type numbers shown (B suffix) have a +/-5% tolerance on nominal Zener voltage. The suffix A is used to identify +/-
10% tolerance; suffix C is used to identify +/-2%; and suffix D is used to identify +/-1% tolerance; no suffix indicates +/-20%
tolerance.
NOTE 2: Zener voltage (VZ) is measured after the test current has been applied for 20 +/- 5 seconds. The device shall be suspended by its
leads with the inside edge of the mounting clips between .375” and .500” from the body. Mounting clips shall be maintained at a
temperature of 25 +8/ -2oC.
NOTE 3: The zener impedance is derived when a 60 cycle ac current having an rms value equal to 10% of the dc zener current (IZT or
IZK) is superimposed on IZT or IZK. Zener impedance is measured at 2 points to ensure a sharp knee on the breakdown curve
and to eliminate unstable units. See MicroNote 202 for variation in dynamic impedance with different zener currents.
NOTE 4: The values of IZM are calculated for a +/- 5% tolerance on nominal zener voltage. Allowance has been made for the rise in zener
voltage above VZT which results from zener impedance and the increase in junction temperature as power dissipation approaches
400 mW. In the case of individual diodes IZM is that value of current which results in a dissipation of 400 mW at 75oC lead
temperature at 3/8” from body.
NOTE 5: The surge for IZSM is a square wave or equivalent half-sine wave pulse of 1/120 sec. duration.
Copyright 2003
10-31-2003 REV B
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
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