2SK522 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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производитель

2SK522

Silicon N-Channel Junction FET

Hitachi -> Renesas Electronics 

2SK522

Absolute Maximum Ratings (Ta = 25°C)

Item

Gate to drain voltage

Gate current

Drain current

Channel power dissipation

Channel temperature

Storage temperature

Symbol

VGDO

IG

ID

Pch

Tch

Tstg

Ratings

Unit

–30

V

10

mA

20

mA

200

mW

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Gate to drain breakdown

voltage

V(BR)GDO

–30

—

Gate cutoff current

I GSS

—

—

Drain current

I

*1

DSS

4

—

Gate to source cutoff voltage VGS(off)

—

—

Forward transfer admittance yfs

8

10

Input capacitance

Ciss

—

6.8

Reverse transfer capacitance Crss

—

0.1

Power gain

PG

20

27

Noise figure

NF

—

1.7

Note: 1. The 2SK522 is grouped by IDSS as follows.

Drain

D

E

F

I DSS

4 to 8

6 to 10

10 to 20

Max Unit

—

V

–10 nA

20

mA

–3

V

—

mS

—

pF

—

pF

—

dB

2.5 dB

Test conditions

IG = –100 µA, IS = 0

VGS = –0.5 V, VDS = 0

VDS = 5 V, VGS = 0

VDS = 5 V, ID = 10 µA

VDS = 5 V, VGS = 0, f = 1 kHz

VDS = 5 V, VGS = 0, f = 1 MHz

VDS = 5 V, VGS = 0,

f = 100 MHz

2

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