HGTG30N60A4_04 Просмотр технического описания (PDF) - Fairchild Semiconductor
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HGTG30N60A4_04 Datasheet PDF : 8 Pages
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Typical Performance Curves Unless Otherwise Specified (Continued)
220
RG = 3Ω, L = 200µH, VCE = 390V
200
VGE = 12V, VGE = 15V, TJ = 125oC
180
160
140
120
0
VGE = 12V, VGE = 15V, TJ = 25oC
10
20
30
40
50
60
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
70
RG = 3Ω, L = 200µH, VCE = 390V
60
TJ = 125oC, VGE = 12V OR 15V
50
40
TJ = 25oC, VGE = 12V OR 15V
30
20
0
10
20
30
40
50
60
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
350
DUTY CYCLE < 0.5%, VCE = 10V
300 PULSE DURATION = 250µs
250
TJ = 25oC
200
TJ = 125oC
150
TJ = -55oC
100
50
0
6
7
8
9
10
11
12
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
15.0
IG(REF) = 1mA, RL = 15Ω, TJ = 25oC
12.5
10.0
VCE = 600V
VCE = 400V
7.5
VCE = 200V
5.0
2.5
0
0
50
100
150
200
250
QG, GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
5
RG = 3Ω, L = 200µH, VCE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF
4
ICE = 60A
3
2
ICE = 30A
1
ICE = 15A
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
TEMPERATURE
20 TJ = 125oC, L = 200µH, VCE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF
16
12
8
ICE = 60A
4
ICE = 30A
0
3
10
ICE = 15A
100
300
RG, GATE RESISTANCE (Ω)
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
©2004 Fairchild Semiconductor Corporation
HGTG30N60A4 Rev. B2
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