GBPC1512W Просмотр технического описания (PDF) - Nell Semiconductor Co., Ltd
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GBPC1512W Datasheet PDF : 4 Pages
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SEMICONDUCTOR
Fig.5 Typical Instantaneous forward
characteristics per diode
100
TA = 150°C
10
TA = 125°C
TA = 100°C
1
TA = 25°C
0.1
0.4 0.5 0.6 0.7 0.8 0.9 1.0
1.1
Instantaneous forward voltage (V)
GBPC15 RRooHHSS
Nell High Power Products
Fig.6 Typical reveres leakage characteristics
per diode
1000
100
10
TA = 150°C
TA = 125°C
TA = 100°C
1
TA = 25°C
0.1
0 10 20 30 40 50 60 70 80 90 100
Percent of rated peak reverse voltage (%)
Fig.7 Typical junction capacitance per diode
1,000
TJ = 25°C
f = 1.0 MHZ
Vsig = 50mVp-p
100
10
1
10
100
Reverse v oltage (V)
Fig.8 Typical transient thermal lmpedance
per diode
1,000
TJ = 25°C
f = 1.0 MHZ
Vsig = 50mVp-p
100
10
1
0.01
0.1
1
10
100
t, Heating time (sec.)
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