KBU6B Просмотр технического описания (PDF) - Mospec Semiconductor

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Компоненты Описание

производитель

KBU6B

Silicon-Bridge Rectifiers

Mospec Semiconductor 

KBU6A THRU KBU6M

FIG-1 FORWARD CURRENT DERATING CURVE

Single phase

Half Wave 60 Hz

Resistive or

Inducttive Load

TC Heat Sink

Mounting

2.6”×2.6”×0.06”

(6.5×6.5×0.15 cm

AL Plate

Ambient

TA

Temperature

P.C.B Mounting

0.47”×0.47” (12×12 mm)

Copper Pads

0.375”(9.5mm) Lead Length

CASE TEMPERATURE (℃)

FIG-3 PEAK FORWARD SURGE CURRENT

TJ=25OC

Single Half

Sine Wave

(JEDEC Method)

FIG-2 TYPICAL FORWARD CHARACTERISITICS

TJ=25OC

Pulse Width=300us

1% Duty Cycle

FORWARD VOLTAGE (Volts)

FIG-4 TYPICAL JUNCTION CAPACITANCE

TJ=25OC

f=1MHz

NUMBER OF CYCLES AT 60 Hz

REVERSE VOLTAGE (Volts)

FIG-5 TYPICAL REVERSE CHARACTERISTICS

TJ=100OC

TJ=25OC

PERCENT OF RATED REVERSE VOLTAGE (﹪)

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