BD241A(1997) Просмотр технического описания (PDF) - STMicroelectronics
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BD241A Datasheet PDF : 4 Pages
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BD241A/B/C/BD242A/B/C
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
Max
Max
3.13
62.5
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICES
ICEO
Collector Cut-off
Current (VBE = 0)
Collector Cut-off
Current (IB = 0)
VCE = rated VCEO
for BD241A/BD242A
for BD241B/BD242B
for BD241C/BD242C
VCE = 30 V
VCE = 60 V
VCE = 60 V
IEBO
Emitter Cut-off Current
(IC = 0)
VCEO(sus)∗ Collector-Emitter
Sustaining Voltage
VEB = 5 V
IC = 30 mA
for BD241A/BD242A
for BD241B/BD242B
for BD241C/BD242C
VCE(sat)∗ Collector-Emitter
Saturation Voltage
IC = 3 A
IB = 0.6 A
VBE∗ Base-Emitter Voltage IC = 3 A
VCE = 4 V
hFE∗ DC Current Gain
IC = 1 A
IC = 3 A
VCE = 4 V
VCE = 4 V
hfe
Small Signal Current IC = 0.5 A
Gain
IC = 0.5 A
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
For PNP types voltage and current values are negative.
For the characteristics curves see TIP31/TIP32 series.
VCE = 10 V f = 1MHz
VCE = 10 V f = 1KHz
Min.
60
80
100
25
10
3
20
Typ.
Max.
0.2
0.3
0.3
0.3
1
1.2
1.8
Unit
mA
mA
mA
mA
mA
V
V
V
V
V
2/4
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