SSI4N60B Просмотр технического описания (PDF) - Fairchild Semiconductor
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производитель
SSI4N60B Datasheet PDF : 9 Pages
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Typical Characteristics
101 Top :
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
100
10-1
10-1
% Notes :
1. 250& s Pulse Test
2. TC = 25$
100
101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
12
10
V = 10V
GS
8
6
V = 20V
GS
4
2
% Note : T = 25$
J
0
0
2
4
6
8
10
12
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
1500
1000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
C
iss
500
C
oss
% Notes :
C
rss
1. VGS = 0 V
2. f = 1 MHz
0
10-1
100
101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
©2001 Fairchild Semiconductor Corporation
101
150oC
100
25oC
10-1
2
-55oC
% Notes :
1.
2.
V25DS0&=
40V
s Pulse
Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150$
25$
% Notes :
1.
2.
V25G0S &=
0V
s Pulse
Test
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
V = 120V
DS
V = 300V
DS
8
V = 480V
DS
6
4
2
% Note : ID = 4.0 A
0
0
4
8
12
16
20
24
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. B, November 2001
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