S138 Просмотр технического описания (PDF) - GOOD-ARK
Номер в каталоге
Компоненты Описание
производитель
S138 Datasheet PDF : 7 Pages
| |||
BSS138
50V N-Channel MOSFET
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
50
V
Zero Gate Voltage Drain Current
IDSS
VDS=50V,VGS=0V
1
μA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
10
uA
Gate-Source Breakdown Voltage
BVGSO
VDS=0V, IG=±250uA
±20
V
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
VGS(th)
RDS(ON)
VDS=VGS,ID=1mA
0.8
VGS=10V, ID=0.22A
VGS=4.5V, ID=0.22A
1.5
V
3.5
Ω
6
Forward Transconductance
gFS
VDS=10V,ID=0.22A
0.1
S
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
Coss
VDS=25V,VGS=0V,
F=1.0MHz
Crss
30
15
PF
6
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
td(on)
2.6
Turn–On Rise Time
Turn-Off Delay Time
tr
td(off)
VDD=30V,VGS=10V,
RGEN=6Ω，ID=0.22A
9
nS
20
Turn–Off Fall Time
tf
6
Total Gate Charge
Qg
1.7
2.4
Gate–Source Charge
Qgs
VDS=25V,ID=0.22A,VGS=10V
0.1
nC
Gate–Drain Charge
Qgd
0.4
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=0.44A
1.4
V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
www.goodark.com
Page 2 of 7
Rev.2.2
Share Link: 