BSS138 Просмотр технического описания (PDF) - Foshan Blue Rocket Electronics Co.,Ltd.

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Компоненты Описание

производитель

BSS138

N-CHANNEL MOSFET in a SOT-23 Plastic Package

Foshan Blue Rocket Electronics Co.,Ltd. 

BSS138

Rev.E Mar.-2016

DATA SHEET

极限参数 / Absolute Maximum Ratings(Ta=25℃)

参数

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current – Continuous

Peak Drain Current

Power Dissipation

Thermal Resistance, Junction-to-Ambient

Storage Temperature Range

符号

Symbol

VDSS

VGSS

ID

IDM

PD

RθJA

Tstg

数值

Rating

50

±20

220

880

360

350

-55～150

单位

Unit

V

V

mA

mA

mW

℃ /W

℃

电性能参数 / Electrical Characteristics(Ta=25℃)

参数

Parameter

Zero Gate Voltage Drain Current

Gate–Body Leakage.

Gate Threshold Voltage

Static Drain–Source

On–Resistance

Forward Transconductance

Drain–Source Diode Forward

Voltage

Gate Resistance

Turn–On Delay Time

Turn–On Rise Time

Turn–Off Delay Time

Turn–Off Fall Time

符号

Symbol

IDSS(1)

IDSS(2)

IGSS

VGS(th)

RDS(on)(1)

RDS(on)(2)

gFS

测试条件

Test Conditions

VGS=0

VDS=50V

VGS=0

VDS=30V

VDS=0V

VGS=±20

VDS=VGS

ID=1.0mA

VGS=10V ID=220mA

VGS=4.5V ID=220mA

VDS=10V ID=220mA

最小值 典型值 最大值 单位

Min Typ Max Unit

0.5 μA

0.1 μA

±100 nA

0.8 1.3 1.5 V

0.7 3.5 Ω

1.0 6.0 Ω

0.12 0.5

S

VSD VGS=0V

IS=440mA

0.8 1.4 V

RG

td(on)

tr

td(off)

tf

VGS=15mV f=1.0MHZ

VDD=30V

VGS=10V

ID=290mA

RGEN=25Ω

9

Ω

2.5 5

ns

9 18 ns

20 36 ns

7 14 ns

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