IS43TR16256A-093NBL(2016) Просмотр технического описания (PDF) - Integrated Silicon Solution

Номер в каталоге

Компоненты Описание

производитель

IS43TR16256A-093NBL
(Rev.:2016)

512Mx8, 256Mx16 4Gb DDR3 SDRAM

Integrated Silicon Solution 

IS43/46TR16256A, IS43/46TR16256AL,

IS43/46TR85120A, IS43/46TR85120AL

512Mx8, 256Mx16 4Gb DDR3 SDRAM

FEATURES

 Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V

 Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V

- Backward compatible to 1.5V

 High speed data transfer rates with system

frequency up to 1066 MHz

 8 internal banks for concurrent operation

 8n-Bit pre-fetch architecture

 Programmable CAS Latency

 Programmable Additive Latency: 0, CL-1,CL-2

 Programmable CAS WRITE latency (CWL) based

on tCK

 Programmable Burst Length: 4 and 8

 Programmable Burst Sequence: Sequential or

Interleave

 BL switch on the fly

 Auto Self Refresh(ASR)

 Self Refresh Temperature(SRT)

SEPTEMBER 2016

 Refresh Interval:

7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C

3.9 us (8192 cycles/32 ms) Tc= 85°C to 105°C

 Partial Array Self Refresh

 Asynchronous RESET pin

 TDQS (Termination Data Strobe) supported (x8

only)

 OCD (Off-Chip Driver Impedance Adjustment)

 Dynamic ODT (On-Die Termination)

 Driver strength : RZQ/7, RZQ/6 (RZQ = 240 Ω)

 Write Leveling

 Up to 200 MHz in DLL off mode

 Operating temperature:

Commercial (TC = 0°C to +95°C)

Industrial (TC = -40°C to +95°C)

Automotive, A1 (TC = -40°C to +95°C)

Automotive, A2 (TC = -40°C to +105°C)

OPTIONS

 Configuration:

512Mx8

256Mx16

 Package:

96-ball BGA (9mm x 13mm) for x16

78-ball BGA (9mm x 10.5mm) for x8

ADDRESS TABLE

Parameter

Row Addressing

Column Addressing

Bank Addressing

Page size

Auto Precharge

Addressing

BL switch on the fly

512Mx8

A0-A15

A0-A9

BA0-2

1KB

A10/AP

A12/BC#

256Mx16

A0-A14

A0-A9

BA0-2

2KB

A10/AP

A12/BC#

SPEED BIN

Speed Option

15H

125K

107M

JEDEC Speed Grade DDR3-1333H DDR3-1600K DDR3-1866M

CL-nRCD-nRP

9-9-9

11-11-11

13-13-13

tRCD,tRP(min)

13.5

13.75

13.91

Note:Faster speed options are backward compatible to slower speed options.

093N

DDR3-2133N

14-14-14

13.09

Units

tCK

ns

Copyright © 2016 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time

without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised

to obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product

can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use

in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc. – www.issi.com –

1

Rev. G2

07/28/2016

Share Link: