RB151 Просмотр технического описания (PDF) - Shenzhen Luguang Electronic Technology Co., Ltd

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производитель

RB151

SINGLE-PHASE SILICON BRIDGE

Shenzhen Luguang Electronic Technology Co., Ltd 

RB150 - RB158

PRV : 50 - 800 Volts

Io : 1.5 Amperes

WOM

FEATURES :

* High surge current capability

* High reliability

* Low reverse current

* Low forward voltage drop

* High case dielectric strength of 2000 VDC

* Ideal for printed circuit board

* Pb / RoHS Free

MECHANICAL DATA :

* Case : Molded plastic

* Epoxy : UL94V-O rate flame retardant

* Terminals : Plated lead solderable per

MIL-STD-202, Method 208 guaranteed

* Polarity : Polarity symbols marked on case

* Mounting position : Any

* Weight : 3.4 grams

B

A

B

RB15 3.5± 0.3 　φ8.1± 0.2

WOM 5.1± 0.55 φ 8 .9± 0.2

φ 0 .8± 0.1

4.3± 0.5

Dimensions in millimeters

MAXIMUMC amRbAienTt tIeNmGpeSraturAe uNnDless EothLeErwCiseTsRpeIcCifieAdL CHARACTERISTICS

Rating at 25 °

.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

RATING

SYMBOL RB150 RB151 RB152 RB154 RB156 RB158 UNIT

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Current Tc=50°C

Peak Forward Surge Current, Single half sine wave

Superimposed on rated load (JEDEC Method)

Maximum Forward Voltage per Diode at IF = 1 A

Maximum DC Reverse Current

Ta = 25 °C

at Rated DC Blocking Voltage

Ta = 100 °C

Typical Thermal Resistance (Note 1)

Operating Junction Temperature Range

Storage Temperature Range

VRRM

50

100

200

400

600

800

V

VRMS

35

70

140

280

420

560

V

VDC

50

100

200

400

600

800

V

IF(AV)

1.5

A

IFSM

40

A

VF

IR

IR(H)

RθJL

TJ

TSTG

0.95

10

100

15

- 40 to + 140

- 40 to + 140

V

µA

µA

°C/W

°C

°C

Note :

1 ) Thermal resistance from Junction to lead mounted on P.C. Board with 0.47" X 0.47" ( 12mm X 12mm ) Cu pads.

http://www.luguang.cn

mail:lge@luguang.cn

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