MGP11N60ED_D Просмотр технического описания (PDF) - ON Semiconductor
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MGP11N60ED_D Datasheet PDF : 6 Pages
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ELECTRICAL CHARACTERISTICS — continued (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
DIODE CHARACTERISTICS — continued
Reverse Recovery Time
trr
—
(IF = 8.0 Adc, VR = 360 Vdc,
dIF/dt = 200 A/µs)
ta
—
tb
—
Reverse Recovery Stored Charge
QRR
—
Reverse Recovery Time
trr
—
(IF = 8.0 Adc, VR = 360 Vdc,
dIF/dt = 200 A/µs, TJ = 125°C)
ta
—
tb
—
Reverse Recovery Stored Charge
QRR
—
INTERNAL PACKAGE INDUCTANCE
Internal Emitter Inductance
LE
(Measured from the emitter lead 0.25″ from package to emitter bond pad)
—
25
TJ = 25°C
20
20 V
17.5 V
15 V
25
12.5 V
20
20 V
17.5 V
MGP11N60ED
Typ
Max
Unit
57
—
ns
18
—
39
—
107
—
µC
91
—
ns
28
—
63
—
275
—
µC
nH
7.5
—
15 V
12.5 V
15
15
VGE = 10 V
VGE = 10 V
10
10
5
0
0
2
4
6
8
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 1. Output Characteristics
5
TJ = 125°C
0
0
2
4
6
8
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 2. Output Characteristics
24
20
VCE = 100 V
5 ms PULSE WIDTH
16
2.25
VGE = 15 V
80 ms PULSE WIDTH
2.05
IC = 8.0 A
12
1.85
6.0 A
8
TJ = 125°C
4
25°C
1.65
4.0 A
0
1.45
5
7
9
11
13
15
17
–50 –25 0 25 50 75 100 125 150
VGE, GATE–TO–EMITTER VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. Transfer Characteristics
Figure 4. Collector–To–Emitter Saturation
Voltage versus Junction Temperature
Motorola IGBT Device Data
3
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